Themodynamic Approach to Diffusion-Controlled Epitaxial Silicon Deposition in Flow System from SiCl4 + H2 Mixtures

Treatment of diffusion-controlled chemical vapour deposition (CDV) usually neglects supersaturation at the gas-solid interface, which is the basic condition for crystal growth. A new approach based on metastable equilibria and on the concept of activity, taking into account departure from equilibrium has been given and applied to the system resulting from SiCl₄ + H₂ mixtures. The control of activity at the gas-solid interface should provide a method of controlling the morphology and perfection of CVD films.