Polaritätsabhängige Struktureffekte in tetraedrisch koordinierten Halbleitern

On the basis of the semiempirical dielectric theory of structure a sensitive parameter accounting for the relative stability of the zincblende and the wurtzite structure in epitaxial layers of A_IIB_VI-compounds on (111)-orientated A_IIIB_V, Si, and Ge substrates is introduced. The statements of the proposed theoretical model are in good agreement with the experimental results.