Non-equilibrium modes of operation for infrared detectors |
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| Institution: | 1. Royal Signals and Radar Establishment, Great Malvern, Worcestershire, England;2. Mullard Limited, Southampton, Hampshire, England;1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;2. University of Chinese Academy of Sciences, Beijing 100039, China;1. Department of Physics, University of Peshawer, Peshawer, 25120, KPK, Pakistan;2. Nanotechnology Lab, Department of Physics, University of Gujrat, Gujrat, 50700, Pakistan;3. Institute of Physics, Technical University of Ilmenau, Ilmenau, 98693, Germany;1. School of Physic and Optoelectronic Engineering, Yangtze University, Jingzhou, 434023, PR China;2. School of Geography Science and Geomatics Engineering, Su Zhou University of Science and Technology, No.99 Xuefu Road, Suzhou, 215009, PR China;3. School of Chemistry and Chemical Engineering, Hunan Institute of Science and Technology, Yueyang, 414006, PR China;1. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;4. Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China;5. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China |
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| Abstract: | New modes of operation for semiconductor infrared detectors are proposed which will enable operation in the middle and far infrared with much reduced cooling requirements. The phenomena of minority carrier exclusion and minority carrier extraction are utilised to hold the carrier densities in narrow-gap semiconductors close to their extrinsic values, at temperatures where they are normally intrinsic. Experimental results showing improved responsivity and detectivity from middle waveband devices operating at near ambient temperature confirm the principle of this new approach. |
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