In-situ monitoring of optical near-field material processing by electron microscopes |
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Authors: | David J Hwang Bin Xiang Sang-Gil Ryu Oscar Dubon Andrew M Minor Costas P Grigoropoulos |
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Institution: | (1) Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore, 117602, Singapore;(2) Singapore-MIT Alliance, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore |
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Abstract: | A GaN-to-InGaN interface modification by predeposition of an ultrathin In-rich InGaN incomplete layer followed by a thin triangular
InGaN well layer was employed to overcome the negative effects of polarization field on light emission efficiency of InGaN/GaN
quantum wells as well as to improve the crystalline quality by avoidance of a significant strain generation and enhanced surfactant
effect. Further, the interface modification induced energy band structure engineering reduces the spatial separation of electrons
and holes, and thus increases the carrier recombination rate. The improvement in crystalline quality, localized potential
fluctuation, and energy band engineering contribute to the significant increase of green emission of the InGaN/GaN quantum
wells. |
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