| 可提高光刻分辨率的新技术 |
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| 引用本文： | 罗先刚,姚汉民,周冲喜,冯伯儒,陈旭南. 可提高光刻分辨率的新技术[J]. 光子学报, 2000, 29(9): 834-837 |
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| 作者姓名： | 罗先刚 姚汉民 周冲喜 冯伯儒 陈旭南 |
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| 作者单位： | 中国科学院光电技术研究所微细加工光学技术国家实验室,成都,610209 |
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| 基金项目： | 中国科学院资助项目，国家重点实验室基金，69876041，，， |
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| 摘 要： | 详细研究了离轴掩模的原理,将离轴照明(OAI)与相移掩模(PSM)技术结合起来,在掩模上同时实现两种功能,较大程度地提高了光刻分辨力.实验表明,在数值孔径 0.42,线曝光波长下,可将光刻分辨力从 0.8μm提高到 0.5μm.
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| 关 键 词： | 离轴照明 相移掩模 光刻分辨力 |
| 收稿时间： | 2000-01-03 |
| 修稿时间： | 2000-01-03 |
NEW TECHNOLOGY WHICH CAN IMPROVE LITHOGRAPHY RESOLUTION |
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| Luo Xiangang,Yao Hanmin,Zhou Chongxi,Feng Boru,Chen Xunan. NEW TECHNOLOGY WHICH CAN IMPROVE LITHOGRAPHY RESOLUTION[J]. Acta Photonica Sinica, 2000, 29(9): 834-837 |
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| Authors: | Luo Xiangang Yao Hanmin Zhou Chongxi Feng Boru Chen Xunan |
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| Affiliation: | State Key lab of Optical Technologies on Microfabrication, Institute of Optics and Electronics, Chinese Academy of Sciences Chengdu 610209 |
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| Abstract: | The principle of off axis mask has been studied in detail.OAI and PSM technologies have been combined in one mask to realize the two functions,resulting in improving the resolution of lithography greatly.The experiment results showed that the resolution of 0.8μm can be improved to 0.5μm under the i line(NA=0.42)exposure system. |
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| Keywords: | Off axis illumination Phase shift mask Lithography resolution |
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