Effect of oxygen deficit and nonuniform distribution of technological impurities on the dielectric properties of Y3Fe5O12 crystals |
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| Authors: | I. D. Lomako M. I. Danil’kevich D. V. Karpinskiĭ I. I. Makoed |
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| Affiliation: | (1) Institute of Solid-State and Semiconductor Physics, National Academy of Sciences of Belarus, ul. Petrusya Brovki 17, Minsk, 220072, Belarus;(2) Brest State University, bul. Kosmonavtov 21, Brest, 224665, Belarus |
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| Abstract: | The experimental and calculated values of the optical permittivity ε∞ have been analyzed and generalized with allowance for the oxygen concentration and possible valences of Fe and O ions in YIG single crystals. It is shown that the deficit of oxygen ions in the samples is accompanied by a decrease in ε∞. A decrease in the gradient of distribution of Ba ions over the sample thickness decreases the difference between the calculated and experimental values. It is revealed that the ratio of the number of valence electrons to the number of core electrons, with regard to their polarizabilities, is proportional to the ratio of the incoherent and coherent X-ray scattering intensities, nk/k. |
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