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| 辐射探测芯片吸收膜理论设计及镍磷黑膜制备 | |
| 引用本文： | 李亚楠,梁中翥,梁静秋,郑娜,方伟,王维彪,禹秉熙. 辐射探测芯片吸收膜理论设计及镍磷黑膜制备[J]. 物理学报, 2010, 59(7): 4530-4534 |
| 作者姓名： | 李亚楠 梁中翥 梁静秋 郑娜 方伟 王维彪 禹秉熙 |
| 作者单位： | 1. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,长春130033;中国科学院研究生院,北京100049 2. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,长春,130033 3. 中国科学院东北地理与农业生态研究所,长春,130012 |
| 基金项目： | 吉林省科技发展计划(批准号:20080122,20090351)和国家自然科学基金(批准号:40803021)资助的课题. |
| 摘 要： | 对新型条形辐射探测芯片的吸收膜层进行了理论分析,并且在金刚石材质的探测芯片上采用电镀方法制备了镍磷黑吸收膜.辐射探测芯片的膜层吸收分析表明,芯片吸收膜层的吸收率正比于表面粗糙度.通过对辐射吸收膜层设计与制作工艺的研究,制备出一种用于条形辐射探测芯片的镍磷黑吸收膜,通过测量其表面形貌结构,表明该膜层具有50nm—1.5μm范围的微结构;红外吸收测试表明其吸收率在1.4—8μm波段为0.989以上,从而提高了辐射探测芯片的性能. |
| 关 键 词： | 绝对辐射计 吸收膜 镍磷黑膜 金刚石 |
| 收稿时间： | 2009-05-04 |
Design and preparation of black-nickel film on the radiometer chip |
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| Li Ya-Nan,Liang Zhong-Zhu,Liang Jing-Qiu,Zheng Na,Fang Wei,Wang Wei-Biao,Yu Bing-Xi. Design and preparation of black-nickel film on the radiometer chip[J]. Acta Physica Sinica, 2010, 59(7): 4530-4534 | |
| Authors: | Li Ya-Nan Liang Zhong-Zhu Liang Jing-Qiu Zheng Na Fang Wei Wang Wei-Biao Yu Bing-Xi |
| Affiliation: | State Key Laboratory of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;State Key Laboratory of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;State Key Laboratory of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;Northeast Institute of Geography and Agricultural Ecology, Chinese Academy of Sciences, Changchun 130012, China;State Key Laboratory of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;State Key Laboratory of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China;State Key Laboratory of Applied Optics,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China |
| Abstract: | The black-nickel film on the flat type radiometer chip was investigated, and a black-nickel film which can be applied in this chip was prepared using electroplating method. The analyses of absorption of radiometer chip indicated that the absorption rate of the chip is proportional to the surface roughness. The black-nickel film was prepared and tested, and surface morphology testing showed that this film has microstructures of the scale 50 nm—1.5 μm. Infrared absorption measurement indicated that the absorptivity of the film in the 1.4—8 μm range is higher than 0.989. This high absorptivity black-nickel film improves the performance of the chip. |
| Keywords: | radiometer absorbing film black-nickel film diamond |
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