Effects of applied DC/AC fields in electrical fixing process with SBN:60 |
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Authors: | A Thompson N Nazhestkina A Siahmakoun G Duree N Roesler |
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Institution: | (1) Department of Physics and Optical Engineering, Rose-Hulman Institute of Technology, Terre Haute, IN 47803, USA, US |
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Abstract: | We present experimental investigations of electrical fixing techniques in Ce:SBN:60. The effect of crystal fatigue on the
diffraction efficiency of electrically fixed photorefractive gratings is studied. We observed that applying an ac field to
the crystal eliminated crystal fatigue and improved diffraction efficiency. A controllable diffraction efficiency of a photorefractive
grating is presented. A reproducible diffraction efficiency of up to 75% is obtained using a write-reveal grating technique
with high-voltage pulses of opposite polarity. We also show that the diffraction efficiency can be controlled by varying the
intensity of the writing beams incident to the crystal during the recording process. A method of determining the hysteresis
loop using the domain-fixing technique is proposed. The dependence of the diffraction efficiency on the direction of the applied
electric field while writing the hologram is studied. Our experiments show that, during writing, when the electric field is
applied opposite to the c axis the grating can be successfully revealed with both positive and negative dc voltages. However,
when the grating is written with a field parallel to the c axis, the grating can be revealed only with a field applied in
the opposite direction.
Received: 28 October 2002 / Revised version: 28 February 2003 / Published online: 14 May 2003
RID="*"
ID="*"Corresponding author. Fax: +1-812/872-6167, E-mail: azad.siahmakoun@rose-hulman.edu |
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Keywords: | PACS: 42 70 Nq 42 40 Ht 77 84 -s |
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