Kinetics and mechanisms of surface reactions in epitaxial growth of Si from SiH4 and Si2H6

Surface science and kinetic modelling studies of the surface chemical mechanisms active during low pressure chemical vapor deposition (CVD) and chemical beam epitaxy (CBE) growth of Si from mono- and disilane are summarized. Time-of-flight direct recoiling (DR) is discussed as an in situ method to analyze the composition of the growth interface. Steady state measurements of surface hydrogen coverage (θ_H) are made by DR in situ during CBE Si growth from Si₂H₆ and SiH₄, and are illustrated here. Key results using other experimental methods are briefly discussed.