Si/C Phases from the IR Laser-induced Decomposition of Silacyclobutane and 1,3-Disilacyclobutane |
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Authors: | Z. Bastl,H. Bü rger,R. Fajgar,D. Pokorná ,J. Pola,M. Senzlober,J. Š ubrt,M. Urbanová |
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Abstract: | CO2 laser-induced infrared multiphoton decomposition (IRMPD) and SF6 photosensitized decomposition (LPD) of silacyclobutane (SCB) and 1,3-disilacyclobutane (DSCB) in the gas phase results in the very efficient deposition of Si/C/H and SiC materials, and it is inferred that the process is dominated by formation of transient silene; silene rearrangement to methylsilylene; silene and methylsilylene dehydrogenation; and polymerization of SiCHn (n < 4) species. The deposits are sensitive to oxygen. Decomposition and SiC formation are favoured with IRMPD experiments conducted with high-energy fluxes. The laser technique is promising for low-temperature chemical vapour deposition of amorphous SiC. |
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Keywords: | laser chemical vapour deposition thin films Si/C/H materials silacyclobutane 1,3-disilacyclobutane silicon carbide |
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