| 三组三元合金异质结的价带带阶 |
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| 引用本文： | 郑金成,王仁智.三组三元合金异质结的价带带阶[J].固体电子学研究与进展,1998,18(1):20-26. |
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| 作者姓名： | 郑金成 王仁智 |
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| 作者单位： | 厦门大学物理学系 |
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| 基金项目： | 国家和福建省自然科学基金，厦门光电子公司工业部的资助 |
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| 摘 要： | 采用基于LMTO－ASA的平均键能计算方法和原子集团展开方法，研究了三组典型的晶格匹配三元合金异质结（GaAs）x（Ge2）1-x／GaAs，（AlAs）x（Ge2）1-x／GaAs和AlxGa1-xAs／GaAs的价带带阶△Ev（x）值。研究表明：AlxGa1-xAs／GaAs异质结的Mv（x）值随合金组分x的变化接近于线性；（GaAs）x（Ge2）1-x／GaAs和（AlAs）x（Ge2）1-x／GaAs的△Ev（x）值随合金组分x的变化是非线性的。△Ev（x）的理论计算值与实验结果相当符合。
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| 关 键 词： | 半导体 异质结 价带带阶 平均键能方法 |
Valence Offsets at Ternary Alloy Heterojunctions (GaAs )_x (Ge_2 )_(1-x)/GaAs, (AlAs )x_ (Ge_2 ) _(1-x)/GaAs and Al_xGa_(1-x)As/GaAs |
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| Zheng Jincheng, Wang Renzhi, Zheng Yongmei, Cai Shuhui.Valence Offsets at Ternary Alloy Heterojunctions (GaAs )_x (Ge_2 )_(1-x)/GaAs, (AlAs )x_ (Ge_2 ) _(1-x)/GaAs and Al_xGa_(1-x)As/GaAs[J].Research & Progress of Solid State Electronics,1998,18(1):20-26. |
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| Authors: | Zheng Jincheng Wang Renzhi Zheng Yongmei Cai Shuhui |
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| Abstract: | In this paper, the valence-band offsets △Ev(x) as a function of thealloy composition x of three typical lattice-matched ternary alloy heterojunctions(GaAs )x (Ge2 )_(1-x)/GaAs, (AlAs )x (Ge2 )1-x/GaAs and AlxGa1-x As/GaAs arestudied,using the average-bond-energy theory in conjunction with a cluster expansion method. It is shown that the variation of △Ev (x) for AlxGa1-xAs/GaAs is nearlinear, while the variations of 3E. (x ) at (GaAs ). (Ge2 )1-x/GaAs and (AlAs )x(Ge2 )1-x/GaAs are nonlinear. The calculation results are in very good agreementwith relevant experimental data. |
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| Keywords: | Semiconductor Heterojunction Valence-band Offset Average-bond-energy Theory |
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