Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts |
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Authors: | Lü Yuan-Jie Lin Zhao-Jun Zhang Yu Meng Ling-Guo Cao Zhi-Fang Luan Chong-Biao Chen Hong Wang Zhan-Guo |
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Affiliation: | School of Physics, Shandong University, Jinan 250100, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | Ni Schottky contacts on AlGaN/GaN heterostructures have been fabricated. The samples are then thermally treated in a furnace with N2 ambient at 600 circC for different times (0.5, 4.5, 10.5, 18, 33, 48 and 72 h). Current-voltage (I-V) and capacitance-voltage (C-V) relationships are measured, and Schrödinger's and Poisson's equations are self-consistently solved to obtain the characteristic parameters related to AlGaN/GaN heterostructure Schottky contacts: the two-dimensional electron gas (2DEG) sheet density, the polarization sheet charge density, the 2DEG distribution in the triangle quantum well and the Schottky barrier height for each thermal stressing time. Most of the above parameters reduce with the increase of stressing time, only the parameter of the average distance of the 2DEG from the AlGaN/GaN interface increases with the increase of thermal stressing time. The changes of the characteristic parameters can be divided into two stages. In the first stage the strain in the AlGaN barrier layer is present. In this stage the characteristic parameters change rapidly compared with those in the second stage in which the AlGaN barrier layer is relaxed and no strain is present. |
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Keywords: | AlGaN/GaN heterostructures thermal stressing polarization self-consistently solving Schrö dinger's and Poisson's equations |
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