Gate voltage-dependent Aharanov–Bohm experiment in the presence of Rashba spin–orbit interaction

We measured gate voltage-dependent Aharonov–Bohm oscillations in an InGaAs-based two-dimensional electron gas ring with a gate on top of one of the branches. After ensemble averaging, the h/e oscillation spectrum showed smooth oscillatory behavior as a function of the gate voltage. This could be a manifestation of the spin–orbit interaction induced interference.