Spectral sensitivity dependencies of backside illuminated planar MCT photodiodes |
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| Institution: | 1. Czech Technical University in Prague, Faculty of Electrical Engineering, Technická 1902/2, 166 27 Prague 6, Czech Republic;2. Institute of Physics of the Czech Academy of Sciences, Na Slovance 1999/2, 182 21 Prague 8, Czech Republic;3. Czech Technical University in Prague, Faculty of Biomedical Engineering, Sítna 3105, 272 01 Kladno, Czech Republic |
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| Abstract: | Spectral sensitivity dependencies of Hg1−xCdxTe (0.20 ⩽ x ⩽ 0.25) backside illuminated planar photodiodes were investigated at T = 80 K to study their longwavelength edge features. It was shown that the longwavelength part of these spectral dependencies is mainly formed by the exponential wavelength dependence of the optical transitions. Empirical dependencies of cut-off wavelengths at different values (λmax, λ0.5, λ0.9) were obtained. The influence of the epitaxial layer thickness on the maximum sensitivity position was also studied. |
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