Fixed charge and interface traps at heterovalent interfaces between Si(1 0 0) and non-crystalline Al2O3–Ta2O5 alloys |
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Authors: | Robert S Johnson Gerald Lucovsky Joon Goo Hong |
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Institution: | Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, USA |
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Abstract: | Characterization by Auger electron spectroscopy (AES) and Fourier transformation infrared spectroscopy (FTIR) confirms (Ta2O5)x(Al2O3)1?x alloys are homogeneous pseudo-binary alloys with increased thermal stability with respect to end member oxides, Ta2O5 and Al2O3. Capacitance–voltage (C–V) and current density–voltage (J–V) data as a function of temperate show that the Ta d-states of the alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset of Ta2O5 with respect to Si. |
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Keywords: | Heterovalent interface Interface traps Fixed charge Trapped limited transport Poole–Frenkel transport |
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