Accurate measurement of sputtered depth for ion sputtering rates and yields: the mesh replica method

For the accurate measurements of crater depths, ion sputtering rates and ion sputtering yields in studies of sputter‐depth profiling using Auger electron spectroscopy (AES) or X‐ray photoelectron spectroscopy (XPS), a proposed mesh replica method has been evaluated. In this method, during ion sputtering, grids of between 50 and 400 mesh (per inch) are placed on the sample to retain unsputtered regions of the original surface to be used as reference. This enables a more accurate measurement of the depth to be made using a stylus profilometer close to the analytical region. The closer‐pitch meshes were thought to offer the prospect of measurements of higher accuracy. Calculations show that sputter deposits from the mesh sides may limit the mesh numbers used to 100 or those of a wider pitch for both stationary and rotated samples. A correlation with published data for stationary samples and new data for rotated samples confirms the calculations. In practice, it is difficult, without a special holder, to have intimate contact between the grid and sample. Such a holder is described. Further calculations concerning the shadowed profiles at the grid bar regions show that the grids may lift off the sample surface by 4–16 µm. This leads to non‐vertical crater walls in each mesh aperture. This effect, however, does not change the above conclusion on the mesh sizes to be used. In this range, the spurious appearance of Auger electrons emitted from the grid material is calculated to be less than 1%. This conclusion applies to the meshes evaluated here, which range in thickness from 13 to 29 µm. Thinner meshes may lead to the applicability of proportionately closer meshed grids in sputter‐profiling applications. Copyright © 2006 John Wiley & Sons, Ltd. The contribution of Martin P. Seah of the National Physical Laboratory is published with the permission of the Controller of HMSO and the Queen's Printer for Scotland.