Crystal Growth and Structure Refinement of K4Ge9 |
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Authors: | Simeon Ponou Thomas F Fässler Prof Dr |
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Institution: | 1. München/Germany, Department Chemie der Technischen Universit?t München;2. München/Germany, Department Chemie der Technischen Universit?t MünchenTechnische Universit?t München, Department Chemie, Lichtenbergstra?e 4, D‐85747 Garching, Germany, Fax: +,49 8928913186 |
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Abstract: | Deep‐red moisture and air sensitive single crystals of K4Ge9 were obtained by reacting GeO2 and elemental Ge with metallic W and K at high temperature in a niobium ampoule. The crystal structure of the compound was determined by single crystal X‐ray diffraction experiments. K4Ge9 crystallizes in a polar space group R3c (No. 161), Z = 4 with a = 21.208(1) and c = 25.096(2) Å. The compound contains discrete Ge94? Wade's nido‐clusters which are packed according to a hierarchical atom‐to‐cluster replacement of the Cr3Si prototype and are separated by K+ cations. Two independent Ge9]4? clusters A (at Cr positions) and B (at Si positions) are found with a ratio A:B = 3:1. The B ‐type cluster satisfactorily represents orientational disorder around the three‐fold axis. |
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Keywords: | Alkali metal germanides Zintl phases Crystal structure |
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