Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures |
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| Authors: | Yu G Arapov S V Gudina A S Klepikova V N Neverov S G Novokshonov G I Kharus N G Shelushinina M V Yakunin |
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| Institution: | 1. Institute of Metal Physics, Ural Branch, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620041, Russia
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| Abstract: | The longitudinal ρ xx (B) and Hall ρ xy (B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0–16) T and temperatures T = (0.05–70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction. |
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