A p-channel SMC poly-Si thin film-transistor with a GOLDD structure |
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| Affiliation: | 1. College of Civil Engineering and Transportation, South China University of Technology, Guangzhou 510640, China;2. State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871, China;3. Chongqing Key Laboratory of Heterogeneous Material Mechanics, College of Aerospace Engineering, Chongqing University, Chongqing 400030, China;4. State Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081, China;5. Institute of Engineering Mechanics, Beijing Jiaotong University, Beijing 100044, China;1. Department of Chemistry, College of Science, Yeungnam University, Gyeongsan, Gyeongbuk 38541, Republic of Korea;2. Korea Institute of Ceramic Engineering and Technology (KICET), Jinju, Gyeongnam 52851, Republic of Korea;1. University of Catania, Department of Electrical, Electronic and Computer Engineering, Catania, Italy;2. CNR-IASI, Istituto di Analisi del Sistemi e Informatica “A. Ruberti”, Rome, Italy;3. University of Messina, Department of Engineering, Messina, Italy |
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| Abstract: | We have developed a silicide-mediated crystallization (SMC) polycrystalline silicon (poly-Si) thin film transistor (TFT) with a gate overlapped lightly doped drain (GOLDD) structure. Applying a GOLDD structure to the SMC poly-Si TFT, the off-state leakage current of coplanar TFT is reduced, while the reduction of the on-state current is relatively small. The p-channel poly-Si TFT with a GOLDD structure exhibited a field effect mobility of 50 cm2/V s and an off-state leakage current of 3.8×10−11 A/μm at the drain voltage of −5 V and the gate voltage of 10 V. |
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