Optical,electrical and structural properties of amorphous SiCN:H films prepared by rf glow-discharge decomposition |
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| Affiliation: | 1. College of Light Industry and Food Engineering, Guangxi University, Nanning 530004, China;2. State Key Laboratory of Pulp and Paper Engineering, South China University of Technology, Guangzhou 510640, China;3. Guangxi Key Laboratory of Clean Pulp & Papermaking and Pollution Control, Nanning 530004, China;1. Escuela Técnica Superior de Ingeniería Agronómica, Alimentaria y de Biosistemas, Technical University of Madrid, Ciudad Universitaria, 28040 Madrid, Spain;2. Research Center for the Management of Environmental and Agricultural Risks (CEIGRAM), Universidad Politécnica de Madrid, Madrid 28040, Spain;3. UMR 7619 METIS, Sorbonne Université, CNRS, EPHE, 4 place Jussieu, 75005 Paris, France |
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| Abstract: | Amorphous quaternary alloy (a-SiCN:H) films composed of silicon, carbon, nitrogen and hydrogen have been prepared by the rf glow-discharge decomposition in a gas mixture of methane, silane, nitrogen and helium. Effects of nitrogen addition on the optical, electrical, structural and optoelectronic properties of the films have been investigated. Optical bandgap remains almost constant for a wide range of nitrogen addition. Dark and photoconductivity becomes greater by the nitrogen addition than those of undoped a-SiC:H films. Incorporation of a small amount of nitrogen in the film is likely to reduce the structural disorder and/or the density of defects, and some nitrogen atoms seem to work as a dopant. On the other hand, large incorporation deteriorates these properties. The nitrogen addition effect appears more remarkably in the films prepared under the low flow rate ratio of methane to silane. |
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