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Spatial alignment evolution of self-assembled In0.4Ga0.6As island arrays grown on GaAs (3 1 1)B surface by atomic hydrogen-assisted molecular beam epitaxy |
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| Institution: | 1. Laboratoire de Physique des Surfaces et des Interfaces, Université de Mons, Av. Maistriau, 19, B-7000 Mons, Belgium;2. Università di Pisa - DESTEC, largo L. Lazzarino, 1, 56122, Pisa, Italy;3. Department of Engineering, University of Bergamo, Viale Marconi 5, 24044 Dalmine, Italy;4. School of Computing, Engineering and Mathematics, University of Brighton, Brighton BN2 4GJ, United Kingdom |
| Abstract: | Self-assembled In0.4Ga0.6As island arrays have been grown on (3 1 1)B GaAs substrates by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE). The evolution process of surface morphology with deposition has been analyzed by atomic force microscopy (AFM) and the development of lateral ordering has been highlighted by two-dimensional fast Fourier transformation (2DFFT) analysis of the AFM images. It is revealed that the InGaAs islands are arranged in nearly perfect two-dimensional (2D) square-like lattice with two sides parallel to 0 1 −1] and −2 3 3] azimuths. Such an alignment of islands is coincident with the anisotropy of bulk elastic modulus of the GaAs (3 1 1)B substrate. |
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