A new rf plasma oxidation method for the insulating AlOx barrier in magnetic tunneling junctions |
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Affiliation: | 1. Key Laboratory of Photochemical Biomaterials and Energy Storage Materials, Heilongjiang Province, College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025, China;2. College of Material Science and Engineering, University of Science and Technology Heilongjiang, Harbin 150022, China |
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Abstract: | An rf remote plasma oxidation technique to form an insulating barrier was carried out to enhance properties of CoFe/AlOx/CoFe magnetic tunneling junctions. The rf remote plasma method was found to reduce self-bias effect on the barrier during the rf oxidation process and to increase atomic oxygen concentration in a plasma state. Experimentally observed rms roughness of the barrier in our magnetic tunnel junction was decreased from 5 to 1.5 Å. In addition, electrical breakdown voltage and magnetoresistance of our magnetic tunnel junction devices were increased from 0.8 V up to 1.2 V and from 7% up to 30%, respectively. |
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