AFM study of a SiC film grown on Si(1 0 0) surface using a C2H4 beam |
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| Institution: | 1. Institute of Bioorganic Chemistry, Polish Academy of Sciences, Z. Noskowskiego 12/14, 61-704 Poznań, Poland;2. Faculty of Chemistry, Adam Mickiewicz University, Umultowska 89 b, 61-614 Poznań, Poland;1. School of Materials Science and Engineering, Institute of Optoelectronics and Nanomaterials, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, China;2. Division of Functional Materials and Nano Devices, Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;3. School of Chemistry and Chemical Engineering, Wuhan Textile University, Wuhan, Hubei 40073, China;1. Hunan Key Laboratory for Computation and Simulation in Science and Engineering, School of Mathematics and Computational Science, Xiangtan University, Hunan 411105, People''s Republic of China;2. Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, School of Physics and Optoelectronic Engineering, Xiangtan University, Hunan 411105, People''s Republic of China |
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| Abstract: | A 3C-silicon carbide (SiC) thin film grown on a Si(1 0 0) surface using an ethylene (C2H4) molecular beam has been studied by atomic force microscopy. At the center of the irradiation area of the ethylene beam, the shape of the SiC islands was rectangular, the average length of which was 74.5 nm and the average height was 13.1 nm. Each SiC island consists of the SiC particles with the average diameter of 17 nm. Just inside of the boundary region of the beam irradiation, the average size and height of the islands decreased to 50.1 and 8.2 nm, respectively. Just outside of the boundary region, the average size and height decreased to 17.7 and 5.1 nm, respectively. The average reaction probabilities at the above three points were estimated to be 0.14, 0.27 and 2.7%, respectively. New growth mode of the crystal growth is proposed (particles gathering island mode). |
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