Growth of InN films on (1 1 1)GaAs substrates by reactive magnetron sputtering |
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| Institution: | 1. Department of Chemistry and Institute of Basic Science, Chonnam National University, Gwangju 500-757, Republic of Korea;2. Institute of National Analytical Research and Service (INARS), Bangladesh Council of Scientific and Industrial Research (BCSIR), Dhaka, Bangladesh;1. Department of Chemistry, Allama Iqbal Open University, 44000 Islamabad, Pakistan;2. Department of Chemistry, Quaid-i-Azam University, 45320 Islamabad, Pakistan;3. Research Center for Modeling and Simulations, National University of Sciences and Technology (NUST), Islamabad, Pakistan;4. M. A. Kazi Institute of Chemistry, University of Sindh, Jamshoro 76080, Pakistan;5. Pharmacognosy Group, Department of Medicinal Chemistry, Biomedical Center (BMC), Uppsala University, Uppsala, Sweden;6. Healthcare Biotechnology, Atta-ur-Rehman School of Applied Biosciences, National University of Science and Technology (NUST), Islamabad, Pakistan;7. Institut für Anorganische Chemie, J.W.-Goethe-Universität, Max-von-Laue-Str.7, D-60438 Frankfurt/Main, Germany;8. Hacettepe University, Department of Physics, 06800 Beytepe-Ankara, Turkey;1. State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, 100083, Beijing, China;2. Institute of Materials Physics, University of Muenster, Wilhelm-Klemm-Str. 10, 48149, Muenster, Germany;1. Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China;2. University of Chinese Academy of Sciences, Beijing 100049, China;3. High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China |
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| Abstract: | Indium nitride (InN) films were grown on (1 1 1)GaAs substrates by reactive magnetron sputtering using an indium target. It was found that the crystal quality of InN films depends strongly on the substrate temperature and sputtering gas pressure, and highly c-axis preferred wurtzite InN films can be obtained at growth temperature as low as 100°C. Based on these results, the growth mechanism of InN films in the reactive magnetron sputtering was discussed. |
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