Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si |
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| Affiliation: | 1. Department of Metallurgical Engineering, Yonsei University, Seoul 120-749, South Korea;2. Department of Physics, Atomic-scale Surface Science Research Center, Yonsei University, Seoul 120-749, South Korea;3. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul, 130-650, South Korea;1. ICGM, Univ. Montpellier, CNRS, ENSCM, Montpellier, France;2. Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China;3. General Chemistry (ALGC) – Materials Modelling Group, Vrije Universiteit Brussel (Free University Brussels – VUB), Pleinlaan 2, 1050 Brussel, Belgium;1. School of Chemical Engineering, Northeast Electric Power University, Jilin 132012, PR China;2. State Key Laboratory for Marine Corrosion and Protection, Luoyang Ship Material Research Institute, Qingdao 266273, PR China;3. Engineering Technology Research Institute, BHDC, Tianjin 300280, PR China;1. Nanomaterials Research Laboratory, Surface Engineering Division CSIR-National Aerospace Laboratories, Bangalore 560017, India;2. ISRO Satellite Centre, Bangalore 560017, India;3. Department of Physics, National Institute of Technology Karnataka, Surathkal, Mangalore 575025, India;1. Laboratory of Applied Physics, Sfax Faculty of Science, University of Sfax, B. P. 1171, 3000 Sfax, Tunisia;2. Laboratoire de Photovoltaïque, Centre des Recherches et des Technologies de l’Energie, Technopole Borj Cedria, B.P. 95, Hammammlif, 2050, Tunisia;3. Applied Physics Laboratory of Materials and Nanomaterials in the Environment, Faculty of Science Gabes, University of Gabes, City of Erriadh, 6079, Gabes, Tunisia;4. MOLTECH-Anjou, Photonics Laboratory, Angers University, 2 Bd. Lavoisier, 49045, Angers, France |
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| Abstract: | Ge ions of 100 keV were implanted into a 120 nm-thick SiO2 layer on n-Si at room temperature while those of 80 keV were into the same SiO2 layer on p-Si. Samples were, subsequently, annealed at 500°C for 2 h to effectively induce radiative defects in the SiO2. Maximum intensities of sharp violet photoluminescence (PL) from the SiO2/n-Si and the SiO2/p-Si samples were observed when the samples have been implanted with doses of 1×1016 and 5×1015 cm−2, respectively. According to current–voltage (I–V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100°C for 4 h show the leakage at both the reverse and the forward region. |
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