Influence of thermal annealing on bonding structure and dielectric properties of fluorinated amorphous carbon film |
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| Institution: | 1. Lodz University of Technology, Institute of Materials Science and Engineering, 90-924 Lodz, Stefanowskiego 1/15, Poland;2. Tele & Radio Research Institute, 03-450 Warsaw, Ratuszowa 11, Poland;1. College of Physics, Optoelectronics and Energy & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, China;2. Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, China;3. Institute of Research for Applicable Computing, University of Bedfordshire, Park Square, Luton LU1 3JU, UK |
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| Abstract: | The bond structure and dielectric properties of fluorinated carbon films after thermal annealing in N2 ambience were studied. The results show that dielectric constant and dielectric loss increased, and optical gap decreased with increasing annealing temperature. The composition and bonding structure of the films were obtained by FTIR and XPS analysis. The data indicate that fluorine-to carbon ratio decreased and CC group increased in the films after the films were annealed. It suggests that the structural and dielectric property changes correlate with the release of fluorine and increase of cross-linking during the annealing. |
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