|
|||||
|
|
Wet and dry etching of Sc2O3 |
|
| Institution: | 1. CNRS, Aix Marseille Univ., IM2NP, service 142, Faculté de saint Jérôme, 13397 Marseille, France;2. Univ. Lyon, INSA de Lyon, MATEIS, UMR 5510, Bât. B. Pascal, F-69621 Villeurbanne, France;1. National Institute of Advanced Industrial Science and Technology (AIST), 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan;2. University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8573, Japan |
| Abstract: | Wet chemical and plasma etch processes were developed for pattering of Sc2O3 films on GaN. Chlorine-based plasma chemistries produced a significant chemical enhancement of removal rate over pure Ar sputtering. The etching was anisotropic and did not significantly alter the surface composition of the Sc2O3 films. Reaction-limited wet etching in the HNO3/HCl/HF system was investigated as a function of solution formulation and temperature. The activation energy for the wet etching ranged from 8 to 14 kcal/mol and the etch rates were independent of solution agitation. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |