Catalyst-free and controllable growth of SiCxNy nanorods |
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| Affiliation: | 1. Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan;2. Department of Physics, National Taiwan University, Taipei, Taiwan;3. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan;4. Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, Taiwan;1. Department of Catalysis and Chemical Reaction Engineering, National Institute of Chemistry, Hajdrihova 19, 1001 Ljubljana, Slovenia;2. Sandoz Development Centre Slovenia, Lek d. d., Kolodvorska 27, 1234 Mengeš, Slovenia;1. School of Chemistry & Chemical Engineering, Yangzhou University, Yangzhou, 225009, China;2. School of Environmental and Chemical Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212003, China;1. Centre for Sustainable Nanomaterials (CSNano) Ibnu Sina Institute for Scientific and Industrial Research, Universiti Teknologi Malaysia, Skudai, 81310 Johor, Malaysia;2. Nanotechnology Research Alliance, Department of Physics, Faculty of Science, Universiti Technologi Malaysia, Skudai, 81310 Johor, Malaysia;3. Razak School of Engineering and Advanced Technology Universiti Technologi Malaysia Kuala Lumpur Level 7, Razak Tower Jalan Semarak, 54100 Kuala Lumpur, Malaysia;4. Chemical Reaction Engineering Group (CREG), Faculty of Chemical and Energy Engineering, Universiti Teknologi Malaysia, Skudai, 81310 Johor, Malaysia |
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| Abstract: | Non vapor–liquid–solid (VLS) method of growing high-purity silicon carbon nitride (SiCxNy) nanorods with rod widths ranging from 10 to 60 nm and lengths of microns is reported. Unlike the case for the ordinary VLS or catalyst-mediated growth, the two-stage process presented here is a catalyst-free approach since it does not involve any catalyst during the growth of the nanorods. The first stage involves formation of a buffer layer containing various densities of SiCxNy nanocrystals by electron cyclotron resonance plasma enhanced chemical vapor deposition (PECVD); whereas the second stage involves a high growth rate along a preferred orientation to produce high-aspect-ratio nanorods using microwave PECVD. Moreover, the number density and the diameter of the nanorods can be controlled by the number density and the size of the nanocrystals in the buffer layer. Production of quasi-aligned SiCxNy nanorods with a number density of the rods as high as 1010 cm−2 has been achieved. The SiCxNy nanorods thus produced exhibit good field emission characteristics with stable operation over 8 h. The approach presented here provides a new advance to synthesize nanorod materials in a controllable manner. |
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