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A poly-Si thin film transistor fabricated by new excimer laser recrystallization employing floating active structure
Institution:1. Nanomaterials Research Institute, Department of Materials and Chemistry, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565, Japan;2. Graduate School of Life and Environmental Sciences, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8572, Japan;3. Precursory Research for Embryonic Science and Technology (PRESTO), Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan;1. State Key Laboratory of Biotherapy and Cancer Center/Collaborative Innovation Center for Biotherapy, West China Hospital, West China Medical School, Sichuan University, Chengdu, Sichuan, 610041, People''s Republic of China;2. Department of Respiratory and Critical Care Medicine, West China Hospital of Sichuan University, Chengdu, Sichuan, 610041, People''s Republic of China;3. National Clinical Research Center for Geriatrics, West China Hospital, Sichuan University, Chengdu, Sichuan, 610041, People''s Republic of China;4. State Key Laboratory of Oral Diseases, National Clinical Research Center for Oral Diseases, Department of Cariology and Endodontics, West China Hospital of Stomatology, Sichuan University, Chengdu, Sichuan, 610041, People''s Republic of China;1. School of Pharmacy, Nanchang University, 461 Bayi Road, Nanchang, 330006, China;2. National Center for Drug Screening, State Key Laboratory of Drug Research, Shanghai Institute of Materia Medica, Chinese Academy of Sciences, Shanghai, 201203, China;3. Department of Biological Chemistry, John Innes Centre, Norwich Research Park, Norwich, NR4 7UH, UK;1. Department of Oncology, Shanghai Medical College, Fudan University, Shanghai, 200032, China;2. Department of Integrative Oncology, Fudan University Shanghai Cancer Center, Shanghai, 200032, China;3. Department of Orthopedics, Shanghai Jiaotong University Affiliated Sixth People''s Hospital, Shanghai, 200233, China;4. Institute of Microsurgery on Extremities, Shanghai Jiaotong University Affiliated Sixth People''s Hospital, Shanghai, 200233, China;1. Department of Neurology, The Second Affiliated Hospital of Nanchang University, Nanchang, China;2. Department of Neurology, The First Affiliated Hospital of Nanchang University, Nanchang, China;1. Department of Biochemistry Food Science, Saga University, Saga City, Saga, 840-8502, Japan;2. Faculty of Agriculture, Saga University, Saga City, Saga, 840-8502, Japan;3. Itochu Sugar Co. Ltd 3 Tamatsuura, Hekinan City, Aichi, 447-8502, Japan;4. Saga University Organization for General Education, Saga City, Saga, 840-8502, Japan
Abstract:We fabricated a high-performance polycrystalline silicon (poly-Si) thin film transistor (TFT) by new excimer laser annealing (ELA) method employing floating active structure. The new simple ELA method produces large lateral grains exceeding 4 μm. A novel poly-Si TFT that exhibits very high mobility (μFE=331 cm2/V s) and low leakage current has been successfully fabricated by single laser irradiation on selectively floating a-Si layer. Uniform lateral grains have been obtained with wide ELA process window.
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