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Electrical and optical properties of InN films prepared by reactive sputtering
Affiliation:1. Takamatsu National College of Technology, Takamatsu 761-8058, Japan;2. Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan;1. Centre for Semio Chemicals, CSIR-Indian Institute of Chemical Technology (IICT), Hyderabad 500007, India;2. Academy of Scientific and Innovative Research, New Delhi 110 025, India;3. Vaccine Immunology Laboratory, Natural Product Chemistry Division, CSIR-Indian Institute of Chemical Technology (IICT), Hyderabad 500007, India;4. Department of Chemistry, Jawaharlal Nehru Technological University, Hyderabad 500085, India;5. School of Pharmaceutical Education and Research (SPER), Jamia Hamdard, New Delhi 110062, India;1. Department of Medical IT Engineering, Soonchunhyang University, Asan, 31538, South Korea;2. Department of Computer Science and Engineering, University of Colorado Denver, Denver, CO, 80217-3364, USA;3. Wellness Coaching Service Research Center, Soonchunhyang University, Asan, 31538, South Korea;1. Institute of Photonics and Electronics, Academy of Sciences of the Czech Republic, Chaberska 57, 18251 Prague 8, Czech Republic;2. Chernivtsi National University, Department of Electronics and Energy Engineering, Kotsubinsky str. 2, 58012 Chernivtsi, Ukraine
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