The effects of surface terminal bonds and microstructure of SiO2 aerogel films on dry etching |
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| Institution: | 1. National Engineering Laboratory of Textile Fiber Materials and Processing Technology, Zhejiang Sci-Tech University, Hangzhou 310018, China;2. Pulp and Paper Center, Zhejiang Sci-Tech University, Hangzhou 310023, China;1. Key Laboratory for Micro/Nano Technology and System of Liaoning Province, Dalian University of Technology, Dalian 116024, China;2. Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education, Dalian University of Technology, Dalian 116024, China |
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| Abstract: | The effects of microstructure and surface terminal bonds of SiO2 aerogel films on dry etching were investigated using Ar, SF6, and C2F6 plasma gases. With Ar plasma etching, physical effect of ion bombardment on porous film was found. In residue-free SF6 plasma etching, reactive etchant transport and high-mass ion bombardment were observed. With C2F6 plasma etching, fluorocarbon residue layer was revealed to maintain surface morphology as acting a barrier to radical transport and ion bombardment. An etching of 450°C-annealed SiO2 aerogel showed that a dense surface induced the decrease in reaction area, inhibition of etchant transport, and then uniform etching. |
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