Effect of dc bias on the compositional ratio of WNX thin films prepared by rf-dc coupled magnetron sputtering |
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| Institution: | 1. University of Amar Telidji, Laboratory of Physics of Materials, Laghouat, Algeria;2. Department of Technical Sciences, University of Amar Telidji, Laghouat, Algeria;1. Department of Chemistry, University of Hartford, West Hartford, CT 06117, USA;2. Institute of Materials Science, University of Connecticut, Storrs, CT 06269, USA;3. College of Engineering, Phoenicia University, Zahrani, South Lebanon, Lebanon;4. Department of Mechanical Engineering, Lafayette College, Easton, PA 18042, USA |
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| Abstract: | The effect of the dc bias on the compositional ratio, resistivity, and deposition rate for tungsten nitride (WNX) films prepared by rf-dc coupled magnetron sputtering have been investigated in detail. The value of the film compositional ratio (N/W) is significantly decreased from 0.8 to 0.2 with increasing the target dc bias voltage. The increase of the target dc bias voltage from ?100 to ?500 V results in a dramatical decrease in the resistivity of WNX films. It is shown that the N/W ratio and the resistivity of WNX thin films deposited at the target dc bias voltage of ?200 V are about 0.5 and 370 μΩ cm, respectively. |
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