Surface electromigration of Au ultrathin film on MoS2 |
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| Institution: | 1. Department of Mechanical and Industrial Engineering, University of Toronto, Ontario M5S 3G8, Canada;2. Université de Lyon, CNRS, INSA — Lyon, LaMCoS UMR5259, F-69621, France;3. Institut des Sciences Analytiques, Université de Lyon, CNRS, Université Claude Bernard-Lyon 1, 5 rue de la Doua, 69100 Villeurbanne, France |
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| Abstract: | The mass transport of Au ultrathin film on a semiconductor MoS2 was investigated by atomic force microscopy (AFM) and scanning Auger microscopy (SAM). The surface electromigration of the Au film was found when a dc current was passed through the MoS2 substrate. The Au ultrathin film on MoS2 grew in a typical Volmer–Weber (V–W) growth mode, The AFM measurements indicated that the distribution of the Au islands exhibited clearly a preferential lateral spread towards the cathode, that is, the surface electromigration took place. The direction of the surface electromigration on MoS2 is opposite to that of the Au electromigration on Si. |
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