Strain effect on surface melting of Si(1 1 1) |
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Institution: | 1. CONiCET, Avda. Rivadavia 1917, CABA, C.P. 1033, Argentina;2. Centro Atómico Constituyentes, Gerencia Materiales, Av. General Paz 1499, C.P. 1650, San Martín, Argentina;3. Centro Atómico Constituyentes, Gerencia Física, Laboratorios Tandar, Av. General Paz 1499, C.P. 1650, San Martín, Argentina;1. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia;2. Novosibirsk State University, 630090 Novosibirsk, Russia |
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Abstract: | We study the strain effect on the surface melting of Si(1 1 1) flat surfaces using Monte Carlo simulation and the empirical Tersoff–Dodson potential. The in-plane strain effect on the atomic structures and the atomic dynamics were investigated at a fixed temperature of 0.82Tm. Surface melting of Si(1 1 1) was induced by either compressive or tensile strain. As the strength of strain increases beyond the critical strength of about 1.5 and 2.5%, respectively, for compressive and tensile strain, the waiting time for surface melting decreases. In the lateral pair correlation function of the melting layers, only the nearest-neighbor correlation remains. Si atoms in the melting layers has a constant diffusion coefficient irrespective of the sign and strength of applied strain. |
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