首页 | 本学科首页   官方微博 | 高级检索  
     检索      


A study of polycrystalline silicon thin films as a seed layer in liquid phase epitaxy using aluminum-induced crystallization
Institution:1. Department of Physics, Shahrood University of Technology, P.O. Box 36199-95161, Shahrood, Iran;2. Department of Physics, Tarbiat Modares University, P.O. Box 14115-175, Tehran, Iran;3. School of Physics, Institute for Research in Fundamental Sciences (IPM), P.O.Box 19395-5531, Tehran, Iran;1. Centre of Law & Economics, Australian National University, Australia;2. Faculty of Business, Government & Law, University of Canberra, Australia;1. School of Chemistry and Physics, University of KwaZulu–Natal, Durban, South Africa;2. Department of Physics, Kogi State University, Anyigba, Nigeria;1. Department of Physics, Arab American University, Jenin, Palestine;2. Group of Physics, Faculty of Engineering, Atilim University, 06836, Ankara, Turkey;1. German Research Center for Geosciences (GFZ), Telegrafenberg, 14473 Potsdam, Germany;2. University of Potsdam, Am Neuen Palais, 14469 Potsdam, Germany;3. Institute of Geodesy and Geophysics, Chinese Academy of Sciences, 430077 Wuhan, China
Abstract:
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号