Observation of hydrogen adsorption on 6H-SiC(0 0 0 1) surface |
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| Affiliation: | 1. Institute of Photonics System, National Chiao Tung University, Tainan 71150, Taiwan;2. Department of Materials Science and Engineering, National Formosa University, Yunlin 632, Taiwan;3. Department of Materials Science and Engineering, National Dong Hwa University, Hualien 97401, Taiwan |
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| Abstract: | We have used coaxial impact-collision ion scattering spectroscopy (CAICISS) and time-of-flight elastic recoil detection analysis (TOF-ERDA) to investigate the adsorption of atomic hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface. It has been found that the saturation coverage of hydrogen on the 6H-SiC(0 0 0 1)√3×√3 surface is about 1.7 ML. Upon saturated adsorption of atomic hydrogen, the √3×√3 surface structure changes to the 1×1 structure. The data of the CAICISS measurements have indicated that as a result of the hydrogen adsorption, Si adatoms on the √3×√3 surface move from T4 to on-top sites. |
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