Reflective interferometer for investigation of the amplitude-phase characteristics of semiconductor nanostructures

It is proposed to apply a reflective interferometer in measurements of the spectral dependence of the phase of reflection of mirrors based on multilayer semiconductor nanostructures. The interferometer has been tested on the semiconductor mirror initiating the self-locking mode of a Nd³⁺: KGd(WO₄)₂ laser. The technique proposed can be applied in a wide wavelength range and has a higher sensitivity for measuring the phase characteristics in comparison with the conventional two-beam interferometers. Original Russian Text ? A.A. Kovalev, V.V. Preobrazhenskii, M.A. Putyato, O.P. Pchelyakov, N.N. Rubtsova, 2009, published in Izvestiya Rossiiskoi Akademii Nauk. Seriya Fizicheskaya, 2009, Vol. 73, No. 2, pp. 290–291.