Distribution and heat-treatment migration studies of Cr implanted GaAs by SIMS |
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| Authors: | F Simondet C Venger G M Martin J Chaumont |
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| Institution: | (1) Laboratoires d'Electronique et de Physique Appliquée, 3, avenue Descartes, F-94450 Limeil-Brévannes, France;(2) IN2 P3, Laboratoire R. Bernas, B.P. 1, F-91406 Orsay, France |
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| Abstract: | Depth profiles of 190 keV Cr implanted-GaAs have been measured by SIMS analysis. The as-implanted Cr profiles are approximately
Gaussian with good agreement between theory and experiment on the projected range. A fast migration of Cr is observed after
heat treatment under encapsulation, and even as soon as the silicon nitride film is deposited. There is no evidence for Cr
precipitation, even in the case of the largest implanted dose (1015 cm−2). |
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| Keywords: | 65 68 79 20 |
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