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Synthesis and Characterization of the Orthorhombic Sn3O4 Polymorph
Authors:Yang-Shin Liu  Akira Yamaguchi  Yue Yang  An Niza El Aisnada  Sho Uchida  Hideki Abe  Shigenori Ueda  Kenji Yamaguchi  Toyokazu Tanabe  Masahiro Miyauchi
Institution:1. Department of Materials Science and Engineering, School of Materials and Chemical Technology, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro-ku, Tokyo, 152-8552 Japan;2. Center for Green Research on Energy and Environmental Materials, National Institute for Materials Science, 1-1, Namiki, Tsukuba, Ibaraki, 305-0044 Japan;3. Synchrotron X-ray Station at SPring-8, National Institute for Materials Science, 1-1-1 Kouto, Sayo, Hyogo, 679-5148 Japan;4. Innovation Center, Mitsubishi Materials Corporation, 1002-14, Mukohyama, Naka, Ibaraki, 311-0102 Japan;5. Department of Materials Science and Engineering, National Defense Academy, 1-10-20, Hashirimizu, Yokosuka, Kanagawa, 239-0811 Japan
Abstract:An unexplored tin oxide crystal phase (Sn3O4) was experimentally synthesized via a facile hydrothermal method. After tuning the often-neglected parameters for the hydrothermal synthesis, namely the degree of filling of the precursor solution and the gas composition in the reactor head space, an unreported X-ray diffraction pattern was discovered. Through various characterization studies, such as Rietveld analysis, energy dispersive X-ray spectroscopy, and first-principles calculations, this novel material was characterized as orthorhombic mixed-valence tin oxide with the composition SnII2SnIVO4. This orthorhombic tin oxide is a new polymorph of Sn3O4, which differs from the reported conventional monoclinic structure. Computational and experimental analyses showed that orthorhombic Sn3O4 has a smaller band gap (2.0 eV), enabling greater absorption of visible light. This study is expected to improve the accuracy of hydrothermal synthesis and aid the discovery of new oxide materials.
Keywords:Hydrothermal Method  Polymorphs  Semiconductor  Sn3O4  Tin Oxide
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