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Negligible Ion Migration in Tin-Based and Tin-Doped Perovskites |
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| Authors: | Kester O Ighodalo Wenjing Chen Zheng Liang Dr Yongliang Shi Shenglong Chu Yihan Zhang Rashid Khan Hongmin Zhou Xu Pan Jiajiu Ye Prof Zhengguo Xiao |
| Institution: | 1. CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 China;2. CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 China
These authors contributed equally to this work. Contribution: Data curation (supporting), Formal analysis (equal), Methodology (supporting), Writing - review & editing (equal);3. Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Solid-State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031 China These authors contributed equally to this work. Contribution: Data curation (equal), Methodology (equal);4. Center for Spintronics and Quantum Systems, State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi 710049 China Contribution: Data curation (lead);5. CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 China Contribution: Data curation (supporting);6. CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026 China Contribution: Writing - review & editing (supporting);7. Instruments Center for Physical Science, University of Science and Technology of China, Hefei, Anhui 230026 China Contribution: Data curation (supporting);8. Key Laboratory of Photovoltaic and Energy Conservation Materials, Institute of Solid-State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, 230031 China |
| Abstract: | Ion migration is a notorious phenomenon observed in ionic perovskite materials. It causes several severe issues in perovskite optoelectronic devices such as instability, current hysteresis, and phase segregation. Here, we report that, in contrast to lead halide perovskites (LHPs), no ion migration or phase segregation was observed in tin halide perovskites (THPs) under illumination or an electric field. The origin is attributed to a much stronger Sn-halide bond and higher ion migration activation energy (Ea) in THPs, which remain nearly constant under illumination. We further figured out the threshold Ea for the absence of ion migration to be around 0.65 eV using the CsSnyPb1-y(I0.6Br0.4)3 system whose Ea varies with Sn ratios. Our work shows that ion migration does not necessarily exist in all perovskites and suggests metallic doping to be a promising way of stopping ion migration and improving the intrinsic stability of perovskites. |
| Keywords: | Ion Migration Light-Emitting Diodes Perovskites Solar Cells Stability |