Institution: | 1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China
Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049 China;2. Bureau of Frontier Sciences and Education, Chinese Academy of Science, Beijing, 100864 China;3. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083 China |
Abstract: | Neuromorphic systems can parallelize the perception and computation of information, making it possible to break through the von Neumann bottleneck. Neuromorphic engineering has been developed over a long period of time based on Hebbian learning rules. The optoelectronic neuromorphic analog device combines the advantages of electricity and optics, and can simulate the biological visual system, which has a very strong development potential. Low-dimensional materials play a very important role in the field of optoelectronic neuromorphic devices due to their flexible bandgap tuning mechanism and strong light-matter coupling efficiency. This review introduces the basic synaptic plasticity of neuromorphic devices. According to the different number of terminals, two-terminal neuromorphic memristors, three-terminal neuromorphic transistors and artificial visual system are introduced from the aspects of the action mechanism and device structure. Finally, the development prospect of optoelectronic neuromorphic analog devices based on low-dimensional materials is prospected. |