| 硅单晶氢致缺陷分布的实验研究 |
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| 引用本文： | 何贤昶.硅单晶氢致缺陷分布的实验研究[J].物理学报,1984,33(5):694-695. |
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| 作者姓名： | 何贤昶 |
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| 作者单位： | 中国科学技术大学 |
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| 摘 要： | 利用X射线形貌术方法研究了含氢硅单晶中氢致缺陷的分布。将原生晶棒从内部切开,观察到在切口暴露表面附近,热处理后产生的氢致缺陷的密度与尺寸与内部未暴露部分相同,而不同于薄片退火的情况,对此结果作了简要的讨论。
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| 收稿时间： | 1983-06-13 |
EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS |
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| HE XIAN-CHANG.EXPERIMENTAL INVESTIGATION OF THE DISTRIBUTION OF DEFECTS CAUSED BY HYDROGEN IN SILICON SINGLE CRYSTALS[J].Acta Physica Sinica,1984,33(5):694-695. |
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| Authors: | HE XIAN-CHANG |
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| Abstract: | Distribution of defects caused by hydrogen in silicon single crystals is investigated by means of X-ray projection topography. It has been observed that the defect density and its size in new exposure surface area are similar to those in the crystal interior, which are different from those observed in thin wafer. These results are discussed briefly. |
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