| 电阻栅MOSFET电流模型分析 |
| |
| 引用本文： | 尹光 石广元. 电阻栅MOSFET电流模型分析[J]. 辽宁大学学报(自然科学版), 1997, 24(3): 75-79 |
| |
| 作者姓名： | 尹光 石广元 |
| |
| 作者单位： | 海军航空兵驻沈阳地区中心军代表室，辽宁大学电子系 |
| |
| 摘 要： | 本文以普通长沟道ＭＯＳＦＥＴ的电流模型为基础，推导出ＲＧ－ＭＯＳＦＥＴ一级近 下电流模型的解析表达式。并对其物理机制进行了分析讨论。
|
| 关 键 词： | RG－MOSFET 电流模型 电阻栅 场效应晶体管 |
Study on Speciality of Posi |
| |
| Lu Pin Shen Guifen Shi Guangyuan The. Study on Speciality of Posi[J]. Journal of Liaoning University(Natural Sciences Edition), 1997, 24(3): 75-79 |
| |
| Authors: | Lu Pin Shen Guifen Shi Guangyuan The |
| |
| Affiliation: | Lu Pin Shen Guifen Shi Guangyuan The Department of Electronic Science and Engineering 110036 |
| |
| Abstract: | Using continuous variable monofrequent light as excitation source, we studied Posi annealing and measured Posi photoluminescence(PL) spectrum. The result demonstrated the mechanism of luminescence that one is due to quantum limiting effect, the other is caused by Si-H bond. |
| |
| Keywords: | Photoluminescence Porous Si(PS). |
| 本文献已被 CNKI 维普 等数据库收录！ |
