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Diffusion behaviour of Au/Ni bilayers deposited by electron beam evaporation and sputtering onto massive copper substrates |
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| Institution: | 1. Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Ramat Aviv, Tel Aviv 69978, Israel;2. Raymond and Beverly Sackler School of Chemistry, Tel Aviv University, Ramat Aviv, Tel Aviv 69978, Israel;1. School of Opto-electronic and Communication Engineering, Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, Xiamen University of Technology, Xiamen 361024, China;2. Department of Materials Science and Engineering, Da-Yeh University, ChangHua 51591, Taiwan;3. Faculty of Materials and Energy, Southwest University, Chongqing 400715, China |
| Abstract: | We have studied the diffusion behaviour of Au/Ni bilayers deposited onto massive copper substrates by electron beam evaporation and sputtering. The structure of the gold films is characterized by transmission electron microscopy. The diffusion of Ni through Au and of Cu through the Au/Ni bilayer is controlled by Auger spectroscopy using the method of the “first arrival”. Diffusion annealings were performed between 300 and 400 °C. The results are discussed in relation with the structure of the films. It appears that a small deposition rate favours single crystal areas in the deposited film and consequently makes a more effective diffusion barrier. |
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