大功率780 nm半导体激光器的设计与制备

设计并制备了一款780 nm半导体激光器，并进行了外腔反馈锁模研究。利用金属有机化学气相沉积技术制备了激光器外延层，采用GaAsP/GaInP作为量子阱/波导层有源区，限制层采用低折射率AlGaInP材料。采用超高真空解理钝化技术，在激光器腔面蒸镀无定形ZnSe钝化层。未钝化器件在输出功率2.5 W时发生腔面灾变损伤（COD），钝化后器件未发生COD现象，电流在10 A时输出功率10.1 W，电光转换效率54%。体布拉格光栅（VBG）外腔锁定前后，器件的光谱半峰全宽分别为2.6 nm和0.06 nm，VBG变温调控波长范围约230 pm。

Fabrication of high-power semiconductor laser with wavelength-locked at 780 nm

A short wavelength of 780 nm semiconductor laser has been designed and fabricated, and the mode locking by external cavity feedback has been studied. The epitaxial layers were prepared by the metal organic chemical vapor deposition technology. GaAsP and GaInP were used as the quantum well and waveguide layer, respectively. The confinement layers were AlGaInP material with low refractive index. Using the ultra-high vacuum cleavage and passivation technology, an amorphous ZnSe passivation layer was deposited on the laser cavity facets. For the original device the catastrophic optical damage (COD) occurred when the output power was 2.5 W. The ZnSe passivated device did not show COD phenomenon until 10.1 W. When the current was 10 A, the output power was 10.1 W, and the electro-optical conversion efficiency was 54%. Before and after the wavelength being locked by the volume Bragg grating (VBG), the full width at half maximum of the spectrum were 2.6 nm and 0.06 nm, respectively, and the wavelength range was about 230 pm through controlling the temperature of VBG.