Compact silicon-on-insulator-based 2 × 2 Mach–Zehnder interferometer electro-optic switch with low crosstalk

We report a compact 2 × 2 Mach–Zehnder interferometer(MZI) electro-optic switch fabricated on a siliconon-insulator using standard complementary metal-oxide semiconductor(CMOS) processes. With a short modulation arm length of 200 μm, the crosstalk is reduced to-22 d B by the new modulation scheme of push–pull modulation with a pre-biased π∕2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.