| 势垒型InAs/InAsSb II类超晶格红外探测器研究进展（特邀） |
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| 引用本文： | 张春芳,柳渊,巩明亮,刘炳锋,龚蕊芯,刘家伯,安和平,张东亮,郑显通,鹿利单,冯玉林,祝连庆.势垒型InAs/InAsSb II类超晶格红外探测器研究进展（特邀）[J].红外与激光工程,2022,51(12):20220667-1-20220667-16. |
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| 作者姓名： | 张春芳 柳渊 巩明亮 刘炳锋 龚蕊芯 刘家伯 安和平 张东亮 郑显通 鹿利单 冯玉林 祝连庆 |
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| 作者单位： | 1.北京信息科技大学 仪器科学与光电工程学院，北京 100096 |
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| 基金项目： | 中国科学技术协会托举人才项目(YESS20200146)；北京信息科技大学重点培育项目(5212110925) |
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| 摘 要： | 红外探测技术在卫星侦察、军事制导、天文观测、医疗检测、现代通信等重要领域发挥着关键作用。II类超晶格（T2SLs）红外探测器作为继碲镉汞探测器之后的新一代红外探测材料，在稳定性、可制造性和成本等方面具有独特优势。势垒型InAs/InAsSb T2SLs红外探测器是最具潜力的T2SLs红外探测器之一，近年来其关键性能得到了稳步提高，但仍受吸收系数低、异质外延生长困难和暗电流大等因素的制约。文中综述了III-V族T2SLs的发展历程，分析了势垒型InAs/InAsSb T2SLs红外探测器的不同势垒结构、关键性能和发展趋势，指出了势垒型InAs/InAsSb T2SLs红外探测器需要解决的关键问题和未来发展方向。
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| 关 键 词： | 红外探测器 T2SLs InAs/InAsSb 势垒结构 |
| 收稿时间： | 2022-10-20 |
Research progress of barrier InAs/InAsSb type-II superlattice infrared detectors (invited) |
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| Institution: | 1.School of Instrument Science and Opto-Electronics Engineering, Beijing Information Science & Technology University, Beijing 100096, China2.Key Laboratory of the Ministry of Education for Optoelectronic Measurement Technology and Instrument, Beijing 100016, China3.School of Instrument Science and Opto-Electronics Engineering, Hefei University of Technology, Hefei 230002, China4.School of Optoelectronic Engineering, Changchun University of Science and Technology, Changchun 130012, China |
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| Abstract: | Infrared detection technology plays a key role in many important fields, such as satellite reconnaissance, military guidance, astronomical observation, medical detection, and modern communications. Type-II superlattices, as a new generation of infrared detection materials after HgCdTe detectors, have unique advantages in terms of stability, manufacturability, and cost. The barrier-type InAs/InAsSb type-II superlattice infrared detectors are one of the most promising type-II superlattice infrared detectors. Their key performance has been steadily improved in recent years but is still constrained by factors such as low absorption coefficient, difficult heteroepitaxial growth, and large dark current. Herein, this article reviews the development history of III-V type-II superlattices, analyzes the different barrier structures, key properties and development trends of barrier-type InAs/InAsSb type-II superlattice infrared detectors, and points out the potential key problems and future development directions of barrier type InAs/InAsSb type-II superlattice infrared detectors. |
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