重离子在14-nm FinFET SRAM器件引起的单粒子翻转

通过重离子实验研究了14-nm FinFET工艺静态随机存取存储器(SRAM)的单粒子翻转(SEU)特性。通过使用Weibull函数拟合SEU截面获得该器件的线性能量转移(LET)阈值:0.1 MeV/(mg/cm2)。对多位翻转(MBU)贡献的统计结果表明，当LET等于40.3 MeV/(mg/cm2)时，MBU的占比超过95%。此外，FinFET SRAM的SEU截面呈现出与Fin相关的入射角度的各向异性。该研究对基于FinFET工艺的抗辐射CMOS集成电路(IC)的设计具有一定的指导作用。

Single-event Upsets (SEUs) Induced by Heavy Ions in 14-nm FinFET SRAM

The characteristic of single-event upset(SEU) in a 14-nm bulk fin field-effect transistor (FinFET) static random access memory(SRAM) is investigated by heavy-ion experiments. The linear energy transfer(LET) threshold 0.1 MeV/(mg/cm2) is obtained by fitting the SEU cross-section using the Weibull function. The contribution of multiple-bit upset(MBU) is investigated. The results show that when the LET is equal to 40.3 MeV/(mg/cm2), greater than 95% of SEU comes from the MBU. Additionally, the SEU cross-section of the FinFET SRAM presents anisotropies for incident angles associated with the fin direction. This research has a certain kind of guiding role in designing of radiation-hardened complementary metal-oxide semiconductor(CMOS) integrated circuits(ICs) based on FinFET technology.