全固态电感储能形成线纳秒短脉冲功率调制器北大核心CSCD

全固态电感储能型脉冲形成线调制器是实现高重复频率、电压高增益和短脉冲输出的一种全新方案。但开关非理想的动态特性和传输线固定的物理空间尺寸限制,难以实现高压短脉冲的产生和调控。为解决上述难题,通过电磁场分析建立了碳化硅场效应器件开关驱动模型,发现高速驱动和开关器件低寄生参数能有效改善开关动态特性,提出了板上高速开关及驱动集成设计解决方案。基于波过程分析和多开关时序逻辑控制理论,提出多开关削波电路拓扑方法和主动负载阻抗调制技术。实验结果表明,该调制器可产生上升时间2.1 ns,下降时间3.5 ns,脉冲宽度5.1 ns的方波短脉冲,并且脉冲宽度5~20 ns连续可调。10级叠加后验证了调整器高压能力,初级储能充电电压25 V时,电压增益可达336倍,重复频率200 kHz。

All-solid-state inductive energy storage pulse forming line nanosecond short pulse power modulator

The all-solid-state inductive energy storage pulse forming line modulator is a brand-new solution to achieve a high repetition rate, high voltage gain, and short pulse output. However, due to the non-ideal dynamic characteristics of the switch and the fixed physical space size of the transmission line, it's difficult to realize the generation and control of high-voltage short pulses. To solve the above problems, we established the switch drive model of the silicon carbide field-effect device through electromagnetic field analysis. It was found that high-speed drive and low parasitic parameters of the switch device can effectively improve the dynamic characteristics of the switch, and the onboard high-speed switch and drive integrated design solution were proposed. At the same time, based on wave process analysis and multi-switch sequential logic control theory, a multi-switch clipping circuit topology method and active load impedance modulation technology are proposed. Finally, an experimental platform was built to verify the above ideas. Experimental results show that the modulator can achieve a square wave short pulse with a rise time of 2.1 ns, a fall time of 3.5 ns, and a pulse width of 5.1 ns and the pulse width is continuously adjustable from 5 to 20 ns. After 10 levels of superposition, the regulator’s high voltage capability is verified. When the primary energy storage charging voltage is 25 V, the voltage gain can reach 336 times, and the repetition frequency is 200 kHz.