| 氧分压与沉积速率对ITO薄膜性能的影响 |
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| 引用本文： | 郭战营,许安涛,张庆丰,郜小勇. 氧分压与沉积速率对ITO薄膜性能的影响[J]. 人工晶体学报, 2009, 38(1): 226-230 |
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| 作者姓名： | 郭战营 许安涛 张庆丰 郜小勇 |
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| 作者单位： | 郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052;焦作师范高等专科学校物理系,焦作,454001;焦作师范高等专科学校物理系,焦作,454001;郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052 |
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| 摘 要： | 本文侧重研究利用电子束蒸发技术制备ITO透明导电薄膜过程中氧分压、沉积速率对其性能的影响.研究发现,随着氧分压的增大,样品透光性和导电性均呈现先增大后减小的趋势;通过计算得出禁带宽度随着氧分压的增大也呈现先增大后减小的趋势.对沉积速率对样品性能的影响进行了研究,结果表明沉积速率降低有利于样品性能的改善.
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| 关 键 词： | ITO薄膜 电子束蒸发 性能 禁带宽度 |
Effect of Oxygen Partial Pressure and Deposition Rate on the Properties of ITO Film |
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| GUO Zhan-ying,XU An-tao,ZHANG Qing-feng,GAO Xiao-yong. Effect of Oxygen Partial Pressure and Deposition Rate on the Properties of ITO Film[J]. Journal of Synthetic Crystals, 2009, 38(1): 226-230 |
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| Authors: | GUO Zhan-ying XU An-tao ZHANG Qing-feng GAO Xiao-yong |
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| Affiliation: | 1.Key Laboratory of Material Physics of Ministry of Education;School of Physical Engineering;Zhengzhou University;Zhengzhou 450052;China;2.Department of Physics;Jiaozuo Normal College;Jiaozuo 454001;China |
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| Abstract: | In this paper,we paied attention to the effect of oxygen partial pressure and deposition rate on the properties of ITO film which was prepared by electron beam evaporation on glass substrates.The results show that with the increase of the oxygen partial pressure the sample reflectivity,transmission and the energy gap were all increased at first,and then decreased.At the same time the effect of the deposition rate on the sample reflectivity,transmission and microstructure have been studied.It shows that lowe... |
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